u <3e,mi-(~onaiictoi ij-^ioauati, li ne. 20 stern ave. springfield, new jersey 07081 usa silicon npn power transistors telephone: (973) 376-2922 (212) 227-6005 2sc2542 description with to-220c package ?high voltage ,high speed switching ?high reliability applications ?switching regulators ?ultrasonic generators ?high frequency inverters general purpose power amplifiers pinning pin 1 2 3 description base collector;connected to mounting base emitter ? characteristics tj=25 unless otherwise specified symbol v(br)ceo v(br)cbo v(br)ebo vce(sat) vse(sat) icbo iebo mfe parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cut-off current emitter cut-off current dc current gain conditions lc=10ma; ib=0 lc=1ma;le=0 le=0.1ma;lc=0 lc=2a; ib=0.4a lc=2a; ib=0.4a vcs=450v ;ie=0 vee=7v; lc=0 lc=2 a ; vce=5v min 400 450 7 10 typ. max 1.2 1.5 1.0 0.1 unit v v v v v ma ma switching times *on ts tf turn-on time storage time fail time lc=4a; ib1=0.8a lb2=-0.8a;rl=20n 1.0 2.0 1.0 us ms ms 2830^ & leroo- 0.44+0.01
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